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InGaN nano-ring structures for high-efficiency light emitting diodes

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9 Author(s)
Choi, H.W. ; Institute of Photonics, University of Strathclyde, Glasgow G4 ONW, United Kingdom ; Jeon, C.W. ; Liu, C. ; Watson, I.M.
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A technique based on the Fresnel diffraction effect for the fabrication of nano-scale site-controlled ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an internal diameter of 500 nm and a wall width of 300 nm. A 1 cm-1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 9 nm blueshift observed in the cathodoluminescence spectra can be attributed to band filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated.

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Applied Physics Letters  (Volume:86 ,  Issue: 2 )