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Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors

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12 Author(s)
Krishna, S. ; Center for High Technology Materials, ECE Department, University of New Mexico, 1313 Goddard Street SE, Albuquerque, New Mexico 87106 ; Forman, Darren ; Annamalai, Senthil ; Dowd, Philip
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We report the demonstration of a two-color infrared focal plane array based on a voltage-tunable quantum dots-in-well (DWELL) design. The active region consists of multiple layers of InAs quantum dots in an In0.15Ga0.85As quantum well. Spectral response measurements yielded a peak at 5.5 μm for lower biases and at 8–10 μm for higher biases. Using calibrated blackbody measurements, the midwavelength and long wavelength specific detectivity (D*) were estimated to be 7.1×1010 cm Hz1/2/W(Vb=1.0 V) and 2.6×1010 cm Hz1/2/W(Vb=2.6 V) at 78 K, respectively. This material was processed into a 320×256 array and integrated with an Indigo 9705 readout chip and thermal imaging was achieved at 80 K.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 19 )