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An interface-proximity model for switchable interfacial uncompensated antiferromagnetic spins and their role in exchange bias

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3 Author(s)
Lee, Ki-Suk ; Nanospintronics Laboratory, School of Materials Science and Engineering, and Research Institute of Advanced Materials, College of Engineering, Seoul National University, Seoul 151-744, Korea ; Yu, Young-Sang ; Kim, Sang-Koog

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1920412 

We propose an interface-proximity model that allows us to solve a longstanding puzzle regarding large discrepancies between the experimentally observed and theoretically estimated values of exchange-bias field Heb in coupled ferromagnetic/antiferromagnetic (F/AF) metallic films. In this proposed model, switchable uncompensated (UC) AF spins in contact with an F layer are taken into account as an additionally inserting layer that is chemically or magnetically distinguishable from each of the nominal AF and F layers. Reductions in Heb, enhancements in coercivity, and other exchange-bias behaviors typically observed in experiments are very well reproduced from this model. The switchable interfacial UC region with a sizable thickness, heretofore ignored, plays a crucial role in the exchange bias phenomenon.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 19 )

Date of Publication:

May 2005

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