Close category search window
 

Epitaxial growth of NaxCoO2 thin films by pulsed-laser deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Krockenberger, Y. ; Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, D-70569 Stuttgart, Germany ; Fritsch, I. ; Cristiani, G. ; Matveev, A.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1927272 

Single-phase thin films of NaxCoO2 have been grown epitaxially by pulsed-laser deposition technique. The growth conditions were studied based on the log pO2-1/T phase diagram of CoO2 using different types of substrate materials. For Na0.58CoO2, metallic behavior is found down to 4.2 K.

Published in:
Applied Physics Letters  (Volume:86 ,  Issue: 19 )

Date of Publication: May 2005

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.