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We report a simple technique to form various kinds of three-dimensional structures in silicon. The process flow is only composed of two steps: lithography and electrochemical etching (“LEE”). The LEE process is an easy and low-cost solution for the fabrication of high-aspect-ratio structures such as walls, tubes, and pillars. Here we demonstrate the possibility to apply the LEE process on the submicrometer scale, indicating that it is a promising tool for silicon nanomachining.
Published in:
Applied Physics Letters
(Volume:86
,
Issue:
18
)
Date of Publication: May 2005
- Page(s):
- 183108 - 183108-3
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.1924883
- Date of Current Version :
- 18 June 2009
- Issue Date :
- May 2005
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