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Browse Journals & Magazines > Applied Physics Letters ...> Volume:86 Issue:18 Help

Resonant-tunneling electron emitter in an AlN/GaN system

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3 Author(s)
Ishida, A. ; Department of Electrical and Electronic Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8561, Japan ; Inoue, Y. ; Fujiyasu, H.

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An AlN/GaN multiple-barrier resonant-tunneling electron emitter is proposed in this letter, utilizing polarization fields in the AlN/GaN heterostructure. The resonant-tunneling voltage is extremely high, compared with usual resonant-tunneling devices, due to the polarization field in the heterostructure, and this high resonant voltage enables practical use of the devices. Selective and high-density electron emission is to be expected through the resonant-tunneling layer and GaN surface accelerating layer.

Published in:
Applied Physics Letters  (Volume:86 ,  Issue: 18 )

Date of Publication: May 2005

Page(s):
183102 - 183102-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1922081
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
May 2005

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