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Epitaxial condition and polarity in GaN grown on a HfN-buffered Si(111) wafer

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6 Author(s)
Xu, X. ; Department of Materials Science and Engineering, University of California, Berkeley, California, and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 ; Armitage, R. ; Shinkai, Satoko ; Sasaki, Katsutaka
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Single-crystal GaN thin films have been deposited epitaxially on a HfN-buffered Si(111) substrates by molecular-beam epitaxy. The microstructural and compositional characteristics of the films were studied in detail by transmission electron microscopy (TEMs). Cross-sectional TEM investigations have revealed the crystallographic orientation relationship in different GaN/HfN/Si layers. GaN film polarity is studied by conventional TEM and convergent beam electron diffraction simulations, and the results show that the GaN film has a Ga polarity with relatively high density of inversion domains. Based on our observations, growth mechanisms related to the structural properties are discussed.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 18 )

Date of Publication:

May 2005

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