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Browse Journals & Magazines > Applied Physics Letters ...> Volume:86 Issue:17 Help

Ultrafast carrier capture at room temperature in InAs/InP quantum dots emitting in the 1.55 μm wavelength region

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5 Author(s)
Bogaart, E.W. ; COBRA Inter-University Research Institute, Eindhoven University of Technology, Department of Applied Physics, P.O. Box 513, 5600 MB Eindhoven, The Netherlands ; Notzel, R. ; Gong, Q. ; Haverkort, J.E.M.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1915527 

The energy and excitation density dependence of the carrier dynamics in self-assembled InAs/InP quantum dots (QDs), emitting in the 1.55 μm wavelength region, is investigated by means of time-resolved pump-probe differential reflection spectroscopy at room temperature. We observe ultrafast carrier capture and subsequential carrier relaxation into the QD ground state within 2.5 ps. The carrier lifetime in the QDs strongly depends on the QD optical transition energy within the QD ensemble as well as the carrier density, and ranges from 560 up to 2600 ps.

Published in:
Applied Physics Letters  (Volume:86 ,  Issue: 17 )

Date of Publication: Apr 2005

Page(s):
173109 - 173109-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1915527
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Apr 2005

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