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8-band k.p theory of the material gain of strained tetrahedral semiconductors: application to 1.3 μm-InGaAsP lasers subject to additional external uniaxial stress

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4 Author(s)
Enders, P. ; Max-Born-Inst. fur Nichtlincare Optik, Berlin, Germany ; Muller, R. ; Klehr, A. ; Gundlach, H.

Numerical and experimental results are presented for bulk 1.3 μm-InGaAsP on InP subject to internal biaxial strain in the xy-plane (active layer, strain axis in growth or z direction) and/or external stress along the lateral, x direction. This uniaxial stress by an external force acting perpendicular to the built-in biaxial strain provides an additional degree of freedom for studying the strain dependence of electron states and, thus, of device properties. The material gain is calculated using a novel method for efficient Brillouin-zone integration. The maximum linear gain is parametrised as g(n)=a(n-nl) for TE- and for TM-polarised light, and the strain dependence of differential gain a and of transparency density n is calculated and discussed in terms of symmetry. The theoretical results compare well with measurements of threshold currents and emission-wavelength differences at TE-TM switching of ridge-waveguide laser diodes

Published in:

Optoelectronics, IEE Proceedings -  (Volume:143 ,  Issue: 1 )

Date of Publication:

Feb 1996

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