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Silicon-based fabrication process for production of optical waveguides

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2 Author(s)
I. R. Johnston ; Dept. of Electron., Southampton Univ., UK ; G. J. Parker

The fabrication of silicon waveguides for use as optical interconnects in silicon optoelectronic integrated circuits for wavelengths beyond 1.1 μm is described. The process does not require silicon-on-insulator technology, and only uses VLSI processing techniques. Long, thin mesas are etched from a silicon substrate and masked along their sides with silicon nitride. The ridges are then isotropically dry etched to undercut the walls. The remaining silicon is thermally oxidised to leave a single-crystal silicon core encased in silicon dioxide. The cross-sectional area of the silicon cores is determined by the anisotropic silicon etch and the oxidation time. Waveguides with dimensions six by four microns surrounded by a micron-thick oxide layer have been fabricated. Results of launching light of wavelength 1.5 μm into this structure show that it is suitable for optical interconnect applications

Published in:

IEE Proceedings - Optoelectronics  (Volume:143 ,  Issue: 1 )