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Dopant-segregation-controlled ZnO single-grain-boundary varistors

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5 Author(s)
Sato, Yukio ; Department of Advanced Materials Science, The University of Tokyo, 5-1-5, Kashiwanoha, Kashiwa, Chiba 277-8561, Japan ; Yodogawa, Masatada ; Yamamoto, Takahisa ; Shibata, N.
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A ZnO single-grain-boundary varistor was designed using a bicrystal. Pr and Co dopant cosegregation at the boundary, key to obtain high varistic property, is optimized by controlling grain-boundary misorientation and, hence, grain-boundary atomic structure. Thus obtained single grain boundary exhibited sufficiently high varistic property. The present result opens up the possibility of single-grain-boundary varistors required for future nanoscale electronic devices.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 15 )

Date of Publication:

Apr 2005

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