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Localized exciton dynamics in nonpolar (1120) InxGa1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

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10 Author(s)
Onuma, T. ; Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan and NICP, ERATO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012, Japan ; Chakraborty, A. ; Haskell, B.A. ; Keller, S.
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Beneficial effects of the localized excitons were confirmed in nonpolar (1120) InxGa1-xN multiple quantum wells (QWs) grown on GaN templates prepared by lateral epitaxial overgrowth. Due to the absence of the polarization fields normal to the QW plane, the photoluminescence (PL) peak energy moderately shifted to the higher energy and the radiative lifetime did not change remarkably with the decrease in the well thickness. Similar to the case for polar InGaN QWs, time-resolved PL signals exhibited the nonexponential decay shape, which can be explained by thermalization and subsequent localization of excitons. Although the growth conditions were not fully optimized, values of the PL intensity at 300 K divided by that at 8 K were 25% and 17% for the peaks at 2.92 and 2.60 eV, respectively.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 15 )

Date of Publication:

Apr 2005

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