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Long-wavelength light emission and lasing from InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer

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9 Author(s)
Liu, H.Y. ; Department of Electronic and Electrical Engineering, EPSRC National Center for III-V Technologies, University of Sheffield, Sheffield S1 3JD, United Kingdom ; Steer, M.J. ; Badcock, T.J. ; Mowbray, D.J.
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The effects of a thin GaAsSb strain-reducing layer on the optical properties of InAs/GaAs quantum dots (QDs) are investigated. With increasing Sb composition, the room-temperature emission wavelength of the InAs QDs increases to ∼1.43 μm. For Sb compositions above 14%, the system becomes Type II, with a decrease of the photoluminescence (PL) efficiency. At a composition of 14%, the room-temperature PL efficiency is maximized, and is also significantly enhanced when compared to that of conventional InGaAs-capped InAs QDs grown under the same conditions. Room-temperature ground-state lasing at 1.292 μm is demonstrated for an InAs/GaAsSb/GaAs structure.

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Applied Physics Letters  (Volume:86 ,  Issue: 14 )