By Topic

Long-wavelength light emission and lasing from InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Liu, H.Y. ; Department of Electronic and Electrical Engineering, EPSRC National Center for III-V Technologies, University of Sheffield, Sheffield S1 3JD, United Kingdom ; Steer, M.J. ; Badcock, T.J. ; Mowbray, D.J.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1897850 

The effects of a thin GaAsSb strain-reducing layer on the optical properties of InAs/GaAs quantum dots (QDs) are investigated. With increasing Sb composition, the room-temperature emission wavelength of the InAs QDs increases to ∼1.43 μm. For Sb compositions above 14%, the system becomes Type II, with a decrease of the photoluminescence (PL) efficiency. At a composition of 14%, the room-temperature PL efficiency is maximized, and is also significantly enhanced when compared to that of conventional InGaAs-capped InAs QDs grown under the same conditions. Room-temperature ground-state lasing at 1.292 μm is demonstrated for an InAs/GaAsSb/GaAs structure.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 14 )