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Effect of hydrogen passivation on charge storage in silicon quantum dots embedded in silicon nitride film

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6 Author(s)
Cho, Chang-Hee ; Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea ; Kim, Baek-Hyun ; Kim, Tae-Wook ; Park, Seong-Ju
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The effect of hydrogen passivation on the charge storage characteristics of two types of silicon nitride films containing silicon quantum dots (Si QDs) grown by SiH4+N2 and SiH4+NH3 plasma was investigated. The transmission electron microscope analysis and the capacitance-voltage measurement showed that the silicon nitride film grown by SiH4+NH3 plasma has a lower interface trap density and a higher density of Si QDs compared to that grown by SiH4+N2 plasma. It was also found that the charge retention characteristics in the Si QDs were greatly enhanced in the samples grown by means of SiH4+NH3 plasma, due to the hydrogen passivation of the defects in the silicon nitride films by NH3 during the growth of the Si QDs.

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Applied Physics Letters  (Volume:86 ,  Issue: 14 )