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Electroreflectance studies of InAs quantum dots with InxGa1-xAs capping layer grown by metalorganic chemical vapor deposition

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8 Author(s)
Chang, W.H. ; Department of Physics and Center for Nano Science and Technology, National Central University, Chung-li, 32054, Taiwan, Republic of China ; Chen, Hsiang-Yu ; Chang, H.-S. ; Chen, W.-Y.
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Electroreflectance spectroscopy was used to study the effect of InxGa1-xAs capping layer on InAs quantum dots grown by metalorganic chemical vapor deposition. The optical transitions of the quantum dots and the InxGa1-xAs capping layer were well resolved. The energy shifts in the InxGa1-xAs capping layer show a different trend as compared to a series of referent InxGa1-xAs quantum wells. These results support the concept of strain-driven alloy decomposition during the InxGa1-xAs layer overgrowth.

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Applied Physics Letters  (Volume:86 ,  Issue: 13 )