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Growth and thermal stability of Ga(1-X)CrXN films

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4 Author(s)
Thaler, G.T. ; Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 ; Frazier, R.M. ; Abernathy, C.R. ; Pearton, S.J.

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GaCrN thin films were synthesized using gas-source molecular beam epitaxy. No evidence of second-phase formation was observed by powder x-ray diffraction. Magnetic characterization performed using a superconducting quantum interference device magnetometer showed evidence of ferromagnetic ordering at room temperature for all samples. In agreement with theoretical predictions, material with 3% Cr showed the highest degree of ordering. No evidence of segregation was found from secondary ion mass spectroscopy analysis. The oxygen content of the film was found to be ∼1019 cm-3. After rapid thermal annealing at temperatures up to 700 °C in a nitrogen ambient for 1 min, the room temperature saturation magnetization of the GaCrN films remained virtually unchanged, in contrast to similarly prepared GaMnN films.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 13 )

Date of Publication:

Mar 2005

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