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Temperature effect on carrier transport characteristics in SrTiO3-δ /Si p-n heterojunction

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9 Author(s)
Guo, Haizhong ; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 10008, People’s Republic of China ; Huang, Yanhong ; Jin, Kuijuan ; Zhou, Qingli
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A p-n junction has been fabricated by depositing an electron-doped (n-) SrTiO3-δ film on a hole-doped (p-) Si substrate with a two atomic-layers thickness epitaxial SrO buffer layer using laser molecular beam epitaxy technique. Good crystallinity and smooth surface of SrTiO3-δ were confirmed by reflection high-energy electron diffraction and x-ray diffraction. The junction shows good rectifying behavior at room temperature, and strong temperature dependence of current-voltage (I-V) properties in the range of 200–300 K. These results present potential applications in future microelectronic devices based on growing perovskite oxide thin films on conventional semiconductors.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 12 )