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We fabricated highly doped Si single-electron transistors (SETs) with a series of geometrically defined multiple islands. Highly doped SETs have the advantage of being easy to fabricate. Moreover, SETs with multiple islands provide a larger peak-to-valley current ratio (PVCR) than SETs with a single island. A PVCR for the Coulomb oscillation of up to 77 was observed at room temperature. This large PVCR is advantageous for circuit operations. We applied the Coulomb oscillation and multiple-gate input characteristics of only one SET to obtain an exclusive-OR operation at room temperature.
Published in:
Applied Physics Letters
(Volume:86
,
Issue:
12
)
Date of Publication: Mar 2005
- Page(s):
- 123118 - 123118-3
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.1894594
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Mar 2005
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