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Self-aligned carbon nanotube transistors with charge transfer doping

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4 Author(s)
Chen, N. ; IBM Research Division, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 ; Klinke, Christian ; Afzali, Ali ; Avouris, P.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1888054 

This letter reports a charge transfer p-doping scheme which utilizes one-electron oxidizing molecules to obtain stable, unipolar carbon nanotube transistors with a self-aligned gate structure. This doping scheme allows one to improve carrier injection, tune the threshold voltage Vth, and enhance the device performance in both the “ON-” and “OFF-” transistor states. Specifically, the nanotube transistor is converted from ambipolar to unipolar, the device drive current is increased by 2–3 orders of magnitude, the device OFF current is suppressed and an excellent Ion/Ioff ratio of 106 is obtained. The important role played by metal–nanotube contacts modification through charge transfer is demonstrated.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 12 )

Date of Publication:

Mar 2005

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