Cart (Loading....) | Create Account
Close category search window

Self-aligned carbon nanotube transistors with charge transfer doping

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Chen, N. ; IBM Research Division, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 ; Klinke, Christian ; Afzali, Ali ; Avouris, P.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

This letter reports a charge transfer p-doping scheme which utilizes one-electron oxidizing molecules to obtain stable, unipolar carbon nanotube transistors with a self-aligned gate structure. This doping scheme allows one to improve carrier injection, tune the threshold voltage Vth, and enhance the device performance in both the “ON-” and “OFF-” transistor states. Specifically, the nanotube transistor is converted from ambipolar to unipolar, the device drive current is increased by 2–3 orders of magnitude, the device OFF current is suppressed and an excellent Ion/Ioff ratio of 106 is obtained. The important role played by metal–nanotube contacts modification through charge transfer is demonstrated.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 12 )

Date of Publication:

Mar 2005

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.