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Pseudomorphic strain effect on the charge-orbital ordering pattern in Pr0.5Sr0.5MnO3 epitaxial thin films

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6 Author(s)
Ogimoto, Yasushi ; Devices Technology Research Laboratories, SHARP Corporation, Nara 632-8567, Japan ; Takubo, Naoko ; Nakamura, Masao ; Tamaru, Hiroharu
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We accomplished coherent epitaxial growth of a Pr0.5Sr0.5MnO3 thin film on (LaAlO3)0.3–(SrAl0.5Ta0.5O3)0.7 (110) substrate, which demonstrates a robust charge-orbital ordering (COO) phase transition. In addition to the isotropic transport properties, a drastic recovery of high-resistivity state (≫20 Ω cm) from a field-cooled metallic state (∼0.5 mΩ cm) was observed at 5 K with a release of a magnetic field. These results indicate a possible modification of COO pattern into CE-type COO state [d(3x2-r2/3y2-r2)] in the film from A-type stripe COO state [d(x2-y2)] observed in bulk samples by a substrate-induced strain.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 11 )

Date of Publication:

Mar 2005

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