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Using local band structure to image strain in semiconductor microstructures

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7 Author(s)
Stievater, T.H. ; Naval Research Laboratory, Washington, D.C. 20375 ; Rabinovich, W.S. ; Park, D. ; Goetz, P.G.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1885181 

We demonstrate that polarization-specific nonlinear optical spectroscopy combined with an accurate band structure model can be used to provide a noncontact image of the strain fields within a micromachined quantum well. Optical measurements of the heavy hole excitonic transition strength and anisotropy are converted into measurements of the in-plane strain components with an 8-band kp model that includes deformation potentials. The resulting two-dimensional strain image is in excellent agreement with a finite-element structural model of the microstructure, demonstrating the validity of this technique.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 11 )

Date of Publication:

Mar 2005

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