Cart (Loading....) | Create Account
Close category search window

High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

12 Author(s)
Skierbiszewski, C. ; Institute of High Pressure Physics, PAS, Unipress, Sokołowska 29/37, 01-142 Warsaw, Poland ; Dybko, K. ; Knap, W. ; Siekacz, M.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The results on growth and magnetotransport characterization of AlGaN/GaN heterostructures obtained by plasma assisted molecular beam epitaxy on dislocation-free (below 100 cm-2) GaN high pressure synthesized bulk substrates are presented. The record mobilities of the two dimensional electron gas (2DEG) exceeding 100 000 cm2/V s at liquid helium temperature and 2 500 cm2/V s at room temperature are reported. An analysis of the high field conductivity tensor components allowed us to discuss the main electron scattering mechanisms and to confirm unambiguously the 2DEG room temperature mobility values.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 10 )

Date of Publication:

Mar 2005

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.