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Potential-well-roughness-induced transition from resonant tunneling to single-electron tunneling in Si/SiO2 double-barrier structure

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3 Author(s)
Ishikawa, Yasuhiko ; Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan ; Ikeda, Hiroya ; Tabe, M.

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The effect of Si potential well roughness on the vertical tunneling transport through the Si/SiO2 double-barrier structure is studied. The increase of Si well roughness is shown to cause a transition of tunneling mode from resonant tunneling (flat limit) to single-electron tunneling (rough limit). The result suggests that the Si well roughness induces (1) formation of the Coulomb islands in the Si well due to the spatial fluctuation of quantized levels and (2) sequential tunneling instead of resonant tunneling due to the increase of scattering events.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 1 )