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Influence of band alignment on recombination in pseudomorphic Si1-xGex/Si quantum wells

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4 Author(s)
Sugawara, Y. ; Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan ; Kishimoto, Y. ; Akai, Y. ; Fukatsu, S.

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Unique potential lineup of pseudomorphic Si1-xGex/Si quantum wells (QWs) allows negative charge buildup in the near-surface region. Significant local charge imbalance created thereby between electrons and holes diminishes the efficiency of the otherwise dominating, nonradiative Shockley-Read-Hall recombination in the QWs at a low level of photoexcitation, which is evidenced by anomalous evolution of photoluminescence intensity and internal quantum efficiency with increasing excitation density.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 1 )