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Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al0.25Ga0.75N/GaN heterojunction field-effect transistors

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6 Author(s)
Kao, C.J. ; Department of Physics, National Central University, Chung-Li 32054, Taiwan ; Sheu, J.K. ; Lai, W.C. ; Lee, M.L.
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This study examined the effect of GaN grown by metalorganic vapor phase epitaxy at low temperature (LT-GaN) on the surface of Al0.25Ga0.75N/GaN heterostructures. Depositing a high-resistivity LT-GaN surface layer on the Al0.25Ga0.75N/GaN heterostructures increased both the sheet carrier concentrations and the electron mobility. This enhancement changed when the LT-GaN high-resistivity layer was removed by high-density-plasma etching. These observations are attributable to the passivation effect, implying that the LT-GaN behaves like a dielectric film, such as silicon dioxide, to passivate the surface states, yielding a different, maybe lower, electronic density of states than that of the Al0.25Ga0.75N free surface. Hall-effect measurement and gate lag measurement were performed on the field-effect transistor devices to clarify the effect of LT-GaN cap layer on Al0.25Ga0.75N/GaN heterostructures.

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Applied Physics Letters  (Volume:85 ,  Issue: 8 )