By Topic

Surfactant effect of gallium during the growth of GaN on AlN(0001) by plasma-assisted molecular beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Gogneau, N. ; Equipe CEA-CNRS-UJF Nanophysique et Semiconducteurs, Département de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble Cedex 9, France ; Sarigiannidou, E. ; Monroy, E. ; Monnoye, S.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The growth mode of N-face GaN deposited on AlN(0001) by plasma-assisted molecular beam epitaxy has been investigated. Based on reflection high-energy electron diffraction experiments, we demonstrate that for appropriate Ga fluxes and substrate temperature, a self-regulated 1-ML-thick Ga excess film can be formed on the growing surface. Depending on the presence of this Ga monolayer, the growth can proceed following either the Stranski–Krastanow or the Frank Van der Merwe growth modes, hence enabling the synthesis of either quantum dots or quantum wells.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 8 )