By Topic

Effects of varying interfacial oxide and high-k layer thicknesses for HfO2 metal–oxide–semiconductor field effect transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
7 Author(s)
Rhee, Se Jong ; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, 10100 Burnet Road, Austin, Texas 78758 ; Chang Yong Kang ; Kang, Chang Seok ; Choi, Rino
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1773370 

A metal–oxide–semiconductor capacitor and field effect transistor with a hafnium oxide (HfO2) dielectric have been fabricated. Various thicknesses of interfacial oxide and HfO2 film have been used. The results show that the flatband voltage changed due to the change in the physical thickness of the HfO2 film, and not that of the interfacial oxide layer. In addition, the effective channel electron mobility depends on both the amount of fixed charges and the distance from the fixed charges to the Si surface. The results also suggest that the fixed charges are rather uniformly distributed throughout the bulk of high-k layer.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 7 )