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Optical and electrical transport properties in silicon carbide nanowires

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5 Author(s)
Seong, Han-Kyu ; Materials Science and Technology Division, Korea Institute of Science and Technology, Seoul 136-650, Korea and Department of Ceramics, Yonsei University, Seoul 120-749, Korea ; Heon-Jin Choi ; Sang-Kwon Lee ; Jung-Il Lee
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We report on the optical and electrical transport properties of single-crystalline silicon carbide nanowires (SiC NWs). The NWs were fabricated by a chemical vapor deposition process, and had diameters of ≪100 nm and lengths of several μm. X-ray diffraction and transmission electron microscopy analysis showed the single-crystalline nature of NWs with a growth direction of <111>. Photoluminescence characterization showed blue emission at room temperature. The electrical measurements from a field effect transistor structure on individual NWs showed n-type semiconductor characteristics. The resistivity and estimated electron mobility on the NWs are 2.2×10-2 Ω cm for 0 V of gate voltage and 15 cm2/(V s), respectively. Our low-resistivity SiC NWs could be applied to a high-temperature operation sensor and actuator due to its own excellent electrical and optical properties.

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Applied Physics Letters  (Volume:85 ,  Issue: 7 )