By Topic

Optical and electrical transport properties in silicon carbide nanowires

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Seong, Han-Kyu ; Materials Science and Technology Division, Korea Institute of Science and Technology, Seoul 136-650, Korea and Department of Ceramics, Yonsei University, Seoul 120-749, Korea ; Heon-Jin Choi ; Sang-Kwon Lee ; Jung-Il Lee
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1781749 

We report on the optical and electrical transport properties of single-crystalline silicon carbide nanowires (SiC NWs). The NWs were fabricated by a chemical vapor deposition process, and had diameters of ≪100 nm and lengths of several μm. X-ray diffraction and transmission electron microscopy analysis showed the single-crystalline nature of NWs with a growth direction of <111>. Photoluminescence characterization showed blue emission at room temperature. The electrical measurements from a field effect transistor structure on individual NWs showed n-type semiconductor characteristics. The resistivity and estimated electron mobility on the NWs are 2.2×10-2 Ω cm for 0 V of gate voltage and 15 cm2/(V s), respectively. Our low-resistivity SiC NWs could be applied to a high-temperature operation sensor and actuator due to its own excellent electrical and optical properties.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 7 )