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Type-I Ge/Ge1-x-ySixSny strained-layer heterostructures with a direct Ge bandgap

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2 Author(s)
Menendez, J. ; Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287–1504 and Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604 ; Kouvetakis, J.

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The electronic properties of Ge/Ge1-x-ySixSny strained-layer heterostructures are predicted theoretically. It is found that a lattice-matched system with fully strained Ge layers and relaxed Ge1-x-ySixSny alloys can have a direct fundamental bandgap with spatial localization in the Ge layers (type I). The Si and Sn concentrations for which such a direct bandgap obtains are close to those that have already been experimentally demonstrated [ M. Bauer, C. Ritter, P. A. Crozier, J. Ren, J. Menendez, G. Wolf, and J. Kouvetakis, Appl. Phys. Lett. 83, 2163 (2003) ]. The required level of tensile strain in the Ge layers is compatible with SiGe technology. The predicted direct bandgap values are as high as 0.6 eV.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 7 )

Date of Publication:

Aug 2004

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