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Mn-doped InAs self-organized diluted magnetic quantum-dot layers with Curie temperatures above 300 K

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6 Author(s)
Holub, M. ; Department of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, University of Michigan, Ann Arbor, Michigan 48109-2122 ; Chakrabarti, S. ; Fathpour, S. ; Bhattacharya, P.
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The magnetic and structural properties of InAs:Mn self-organized diluted magnetic quantum dots grown by low-temperature (∼270 °C), solid-source molecular-beam epitaxy using a very low InAs growth rate (≪0.1 ML/s) are investigated. A Curie temperature (TC) of ∼350 K is measured in a sample grown with a Mn/In flux ratio of 0.15. Electron energy-loss spectroscopy confirms that most of the Mn remains within the InAs quantum dots. We propose as a possible explanation for this high TC the effects of magnetic and structural disorder introduced by a random incorporation and inhomogeneous distribution of Mn atoms amongst the InAs quantum dots.

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Applied Physics Letters  (Volume:85 ,  Issue: 6 )