By Topic

Experimental evidence for index modulation by carrier depletion in SiGe/Si multiple quantum well structures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
7 Author(s)
Lupu, A. ; Institut d’Electronique Fondamentale, CNRS UMR 8622, Université Paris Sud, 91405 Orsay Cedex, France ; Marris, D. ; Pascal, D. ; Cercus, J.-L.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1781371 

Experimental results for the refractive index variation obtained by hole depletion in SiGe/Si multiple quantum wells inserted in a reverse-biased p-i-n junction are reported. The electronic contribution to the index variation is unambiguously separated from the thermal one. Measured refractive index changes around 4.2×10-5 V-1 are in quite good agreement with modeling.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 6 )