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Experimental evidence for index modulation by carrier depletion in SiGe/Si multiple quantum well structures

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7 Author(s)
Lupu, A. ; Institut d’Electronique Fondamentale, CNRS UMR 8622, Université Paris Sud, 91405 Orsay Cedex, France ; Marris, D. ; Pascal, D. ; Cercus, J.-L.
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Experimental results for the refractive index variation obtained by hole depletion in SiGe/Si multiple quantum wells inserted in a reverse-biased p-i-n junction are reported. The electronic contribution to the index variation is unambiguously separated from the thermal one. Measured refractive index changes around 4.2×10-5 V-1 are in quite good agreement with modeling.

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Applied Physics Letters  (Volume:85 ,  Issue: 6 )