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Improved characteristics of organic light-emitting devices by surface modification of nickel-doped indium tin oxide anode

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2 Author(s)
Hsu, Ching-Ming ; Department of Electrical Engineering, Southern Taiwan University of Technology, 1 Nan-Tai Street, Yung-Kang City, Tainan County, Taiwan 710, Republic of China ; Wu, Wen-Tuan

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This letter presents the optoelectrical performance of an organic light-emitting diode (OLED) through the elevation of indium tin oxide (ITO) anode work function by Ni co-sputter surface doping and additional O2 plasma treatment. The turn-on voltage of OLED devices can be reduced by 2.3 V for Ni atomic concentration greater than 1.8% and by 2.7 V for the additional O2 plasma treatment. Devices with Ni(2.6%)-doped and O2 plasma treated ITO anodes perform the highest luminance efficiency (0.91 lm/W), three times larger than undoped ITO (0.31 lm/W) at 250 cd/m2.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 5 )

Date of Publication:

Aug 2004

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