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Microstructure and properties of single crystal BaTiO3 thin films synthesized by ion implantation-induced layer transfer

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3 Author(s)
Park, Young-Bae ; Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125 ; Ruglovsky, Jennifer L. ; Atwater, Harry A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1773373 

Single crystal BaTiO3 thin films have been transferred onto Pt-coated and Si3N4-coated substrates by the ion implantation-induced layer transfer method using H+ and He+ ion coimplantation and subsequent annealing. The transferred BaTiO3 films are single crystalline with root mean square roughness of 17 nm. Polarized optical and piezoresponse force microscopy (PFM) indicate that the BaTiO3 film domain structure closely resembles that of bulk tetragonal BaTiO3 and atomic force microscopy shows a 90° a–c domain structure with a tetragonal angle of 0.5°–0.6°. Micro-Raman spectroscopy indicates that the local mode intensity is degraded in implanted BaTiO3 but recovers during anneals above the Curie temperature. The piezoelectric coefficient, d33, is estimated from PFM to be 80–100 pm/V and the coercive electric field (Ec) is 12–20 kV/cm, comparable to those in single crystal BaTiO3.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 3 )

Date of Publication:

Jul 2004

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