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Oxygen sensing characteristics of individual ZnO nanowire transistors

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4 Author(s)
Li, Q.H. ; Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, China ; Liang, Y.X. ; Wan, Q. ; Wang, T.H.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1840116 

Individual ZnO nanowire transistors are fabricated, and their sensing properties are investigated. The transistors show a carrier density of 2300 μm-1 and mobility up to 6.4 cm2/V s, which are obtained from the ISD-VG curves. The threshold voltage shifts in the positive direction and the source-drain current decreases as ambient oxygen concentration increases. However, the opposite occurs when the transistors are under illumination. Surface adsorbates on the ZnO nanowires affect both the mobility and the carrier density. Our data are helpful in understanding the sensing mechanism of the gas sensors.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 26 )

Date of Publication:

Dec 2004

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