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Shapes of InAs quantum dots on InGaAs/InP

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7 Author(s)
Hwang, Heedon ; School of Materials Science and Engineering & ISRC, Seoul National University, Seoul 151-742, Korea ; Yoon, Sukho ; Kwon, Hyeok ; Yoon, Euijoon
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InAs self-assembled quantum dots were grown on InGaAs lattice-matched on InP by metalorganic chemical vapor deposition. The facet formation on the dot was investigated by atomic force microscopy and transmission electron microscopy. The {136}-faceted InAs dots were elongated along either [130] or [310] to form parallelogram-shaped islands analogous to hut cluster formation in SiGe/Si quantum dots. Some parallelogram dots also exhibited {110} faceting, presumably on undergoing a shape transition toward dots with facets of higher symmetry.

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Applied Physics Letters  (Volume:85 ,  Issue: 26 )