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Lightly phosphorus-doped homoepitaxial diamond films grown by chemical vapor deposition

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4 Author(s)
Katagiri, M. ; Graduate School of Library, Information and Media Studies, University of Tsukuba, 1-2 Kasuga, Tsukuba, Ibaraki 305-8550, Japan ; Isoya, Junichi ; Koizumi, Satoshi ; Kanda, Hisao

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Lightly phosphorus-doped {111} homoepitaxial diamond films have been grown by microwave plasma-assisted chemical vapor deposition under optimized growth conditions. The Phosphorus concentration in the film can be controlled at a low doping level of the order of 1016 cm-3. N-type conductivity of the films with phosphorus concentrations above 1×1016 cm-3 is reproducibly confirmed by Hall-effect measurements in the temperature range from 300 to 873 K. The highest value of the Hall mobility at room temperature is 660 cm2/V s obtained for a film with a phosphorus concentration of 7×1016 cm-3.

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Applied Physics Letters  (Volume:85 ,  Issue: 26 )