By Topic

Lightly phosphorus-doped homoepitaxial diamond films grown by chemical vapor deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
4 Author(s)
Katagiri, M. ; Graduate School of Library, Information and Media Studies, University of Tsukuba, 1-2 Kasuga, Tsukuba, Ibaraki 305-8550, Japan ; Isoya, Junichi ; Koizumi, Satoshi ; Kanda, Hisao

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1840119 

Lightly phosphorus-doped {111} homoepitaxial diamond films have been grown by microwave plasma-assisted chemical vapor deposition under optimized growth conditions. The Phosphorus concentration in the film can be controlled at a low doping level of the order of 1016 cm-3. N-type conductivity of the films with phosphorus concentrations above 1×1016 cm-3 is reproducibly confirmed by Hall-effect measurements in the temperature range from 300 to 873 K. The highest value of the Hall mobility at room temperature is 660 cm2/V s obtained for a film with a phosphorus concentration of 7×1016 cm-3.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 26 )