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Weak localization thickness measurements of Si:P delta-layers

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3 Author(s)
Sullivan, D.F. ; Laboratory for Physical Sciences, University of Maryland, College Park, Maryland 20740 ; Kane, B.E. ; Thompson, P.E.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1842366 

We report on our results for the characterization of Si:P delta-layers grown by low temperature molecular beam epitaxy. Our data show that the effective thickness of a delta-layer can be obtained through a weak localization analysis of electrical transport measurements performed in perpendicular and parallel magnetic fields. An estimate of the diffusivity of phosphorus in silicon is obtained by applying this method to several samples annealed at 850 °C for intervals of 0–15 min. With further refinements, this may prove to be the most precise method of measuring delta-layer widths developed to date, including that of secondary ion mass spectrometry analysis.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 26 )

Date of Publication:

Dec 2004

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