By Topic

Epitaxial growth and surface modeling of ZnO on c-plane Al2O3

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
Murphy, T.E. ; Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 ; Walavalkar, S. ; Phillips, J.D.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1842357 

The growth of ZnO on c-plane sapphire by molecular beam epitaxy is presented for varying ratios of zinc and oxygen flux. Reflection high energy electron diffraction patterns during epitaxial growth suggest clear differences in the evolution of surface morphology for differing Zn flux. Atomic force microscope images indicate sizable hexagonal features in the surface morphology for Zn-rich material. A stochastic growth model is presented to represent the experimental ZnO surface, where differences in adatom lateral diffusion length are suspected to be the cause of the differing surface morphology.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 26 )