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Atomic-scale analysis of hydrogen-terminated Si(110) surfaces after wet cleaning

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3 Author(s)
Arima, Kenta ; Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1, Yamadaoka, Suita, Osaka 565-0871, Japan ; Katoh, Jun ; Endo, Katsuyoshi

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1840108 

Atomically resolved scanning tunneling microscopy observations are performed on hydrogen-terminated Si(110) surfaces after wet cleaning. When a Si(110) wafer is dipped into dilute HF-containing solution, the surface is constructed by piling small terraces and steps. When the sample is consequently rinsed with ultrapure water, some characteristic features such as a zig–zag chain inside a terrace, a single row at step edges and an isolated zig–zag chain on a terrace are clearly observed, and their atomic arrangements are determined. Excessive rinsing, however, creates the ridge-shaped structure of nanometer height, which is explained by anisotropic etching by OH- ions in water.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 25 )

Date of Publication:

Dec 2004

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