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Electron-irradiation enhanced photoluminescence from GaInNAs/GaAs quantum wells subject to thermal annealing

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13 Author(s)
Pavelescu, E.-M. ; Optoelectronics Research Centre, P.O. Box 692, and Institute of Materials Chemistry, P.O. Box 541, Tampere University of Technology, 33101 Tampere, Finland ; Gheorghiu, A. ; Dumitrescu, M. ; Tukiainen, A.
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Electron irradiation of a 1.3-μm-GaInNAs/GaAs multi-quantum-well heterostructure, grown by molecular beam epitaxy and subsequently rapid-thermal annealed, is found to induce much stronger photoluminescence than what is observed for an identical as-grown sample upon annealing. Annealing of the irradiated sample also causes a small additional spectral blueshift and reduces alloy potential energy fluctuations at the conduction band minimum. These irradiation-related phenomena are accompanied by small but discernable changes in x-ray diffraction features upon annealing, which indicate compositional and/or structural changes in the quantum wells.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 25 )

Date of Publication:

Dec 2004

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