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Photoemission study of energy-band alignment for RuOx/HfO2/Si system

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7 Author(s)
Li, Q. ; Department of Physics, National University of Singapore, Singapore 117542, Singapore ; Wang, S.J. ; Li, K.B. ; Huan, A.C.H.
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Conductive oxides RuOx as alternative electrode on high-κ HfO2 gate dielectric have been fabricated by ultrahigh-vacuum sputtering and subsequently oxidized using oxygen plasma. The energy-band alignment for the RuOx/HfO2/Si system and the oxidation-state dependence of barrier height for RuOx contacting to HfO2 dielectrics has been analyzed by x-ray photoemission spectroscopy. The valence- and conduction-band offsets of HfO2/Si are determined to be 3.05±0.1 and 1.48±0.1 eV, respectively. The barrier heights for the RuOx contacting to HfO2 are oxidation-state dependent, in the range of 1.95–2.73 eV.

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Applied Physics Letters  (Volume:85 ,  Issue: 25 )