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Surface potential measurements of AlGaN/GaN high-electron-mobility transistors by Kelvin probe force microscopy

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5 Author(s)
Nakagami, Kohei ; Department of Quantum Engineering, Nagoya University, Furo-Cho, Chikusa-ku, Nagoya 464-8603, Japan ; Ohno, Y. ; Kishimoto, Shigeru ; Maezawa, K.
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Surface potential of the AlGaN/GaN high-electron-mobility transistors was measured by Kelvin probe force microscopy to study the mechanism of the drain current collapse. The potential after the gate bias stress increased due to the emission of trapped electrons from the surface states. The time constant of the potential increase (75 s) was comparable to the time constant of the drain current recovery from the collapsed level.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 24 )