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Ga+ implantation in the organic crystal (TMTSF)2PF6 by focused ion beam

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4 Author(s)
Wang, K. ; Laboratoire de Physique des Solides, UMR CNRS, 91405 Orsay, France ; Schneegans, O. ; Moradpour, A. ; Jomard, F.

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Ga ion implantation in the organic crystal (TMTSF)2PF6 (TMTSF: tetramethyl tetraselena fulvalene) is performed using focused ion beam. It is shown that heavy-ion deep implantation inside the sample is obtained for relatively weak ion energy. The electric conduction of the impact areas, at first strongly reduced by ion irradiation, is observed to be reinforced by further ion implantation. The conduction behaviors of the Ga-rich zones can be described by a small polaron hopping model.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 24 )