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Defects and strain relaxation in silicon-germanium-on-insulator formed by high-temperature oxidation

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4 Author(s)
Bedell, S.W. ; IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 ; Fogel, K. ; Sadana, D.K. ; Chen, H.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1835532 

SiGe layers were grown on silicon-on-insulator substrates and oxidized at temperatures from 1200 to 1300 °C to form silicon-germanium-on-insualtor (SGOI) layers. Strain relaxation of the SGOI film is shown to be dislocation mediated and the residual strain scaled with the final SGOI thickness in a manner consistent with equilibrium theory. Stacking faults (SF) are observed in the relaxed SGOI layer and their density increases exponentially with decreasing film thickness. In films below ∼500 Å, the SF density becomes comparable with the dislocation density which may be responsible for differences between equilibrium and measured residual strain in thin SGOI layers.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 24 )

Date of Publication:

Dec 2004

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