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Detection of subnanometric layer at the Si/SiO2 interface and related strain measurements

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4 Author(s)
Donnadieu, P. ; LTPCM (CNRS-INPG-UJF), BP 75, 38402 Saint Martin d’Hères, France ; Blanquet, E. ; Jakse, N. ; Mur, P.

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The structure of the Si/SiO2 interface was investigated by high-resolution transmission electron microscopy (HRTEM) and electron diffraction, which appears as an efficient tool to detect any organized layer at the interface. Using HRTEM image analysis, a 1-nm-thick distorted Si layer is identified at the interface, the local deformation corresponds to a compressive stress of approximately 2 GPa.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 23 )