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Fabrication of metal–oxide–semiconductor field-effect transistors using crystalline γ-Al2O3 films as the gate dielectrics

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4 Author(s)
Okada, Takayuki ; Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, 441-8580, Japan ; Sawada, K. ; Ishida, M. ; Shahjahan, Mohammad

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Crystalline γ-Al2O3 films were employed as high-κ gate dielectrics in metal–oxide–semiconductor field-effect transistors (MOSFETs) and characterization of these devices was performed. The crystalline dielectric was deposited with thicknesses of 4.0–4.5 nm by mixed source molecular beam epitaxy and the capacitance equivalent thicknesses obtained were 2.7–2.9 nm. The MOSFETs had exceptionally steep subthreshold slopes (63–67 mV/decade), relatively low negative fixed charge densities (5–7×1012 cm-2) and interface state densities (2–3×1011 eV-1 cm-2). The maximum values of the effective carrier mobilities were 145 cm2/V s for electrons and 85 cm2/V s for holes.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 21 )

Date of Publication:

Nov 2004

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