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Dual role of fluorine at the SiSiO2 interface

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5 Author(s)
Tsetseris, L. ; Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 ; Zhou, X.J. ; Fleetwood, D.M. ; Schrimpf, R.D.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1825621 

Fluorine is known to have both a beneficial and adverse role on the characteristics of SiSiO2-based devices. Here we report the results of first-principles calculations in terms of which we elucidate this dual behavior. On one hand, we find that Si–F interfacial bonds are resistant to depassivation by hydrogen species, with the process being shut down in the presence of holes. However, we also show that any excess of fluorine has a negative effect since it either creates stretched bonds, which can act as carrier traps, or disrupts an abrupt interface by cleavage of Si–Si bonds.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 21 )

Date of Publication:

Nov 2004

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