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Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers

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5 Author(s)
Liu, Po Chun ; Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China ; Lu, Cheng Lun ; Sermon Wu, YewChung ; Cheng, Ji-Hao
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The electrical characteristics and microstructures of n-type (100) GaAs bonded interfaces were systematically investigated. Experimental results indicated that GaAs did not bond directly to itself, but via an amorphous oxide layer at 400 °C. When temperatures increased above 400 °C, the oxide bonded area declined and finally disappeared. Electrical resistance decreased with bonding temperature. However, the resistance increased with temperatures exceeding 850 °C.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 21 )