By Topic

Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Liu, Po Chun ; Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China ; Lu, Cheng Lun ; Sermon Wu, YewChung ; Cheng, Ji-Hao
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The electrical characteristics and microstructures of n-type (100) GaAs bonded interfaces were systematically investigated. Experimental results indicated that GaAs did not bond directly to itself, but via an amorphous oxide layer at 400 °C. When temperatures increased above 400 °C, the oxide bonded area declined and finally disappeared. Electrical resistance decreased with bonding temperature. However, the resistance increased with temperatures exceeding 850 °C.

Published in:

Applied Physics Letters  (Volume:85 ,  Issue: 21 )