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Browse Journals & Magazines > Applied Physics Letters ...> Volume:85 Issue:20 Help

Fabrication of ambipolar field-effect transistor device with heterostructure of C60 and pentacene

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6 Author(s)
Kuwahara, Eiji ; Department of Chemistry, Okayama University, Okayama 700-8530, Japan and CREST, Japan Science and Technology Agency, Kawaguchi, 322-0012, Japan ; Kubozono, Yoshihiro ; Hosokawa, Tomoko ; Nagano, Takayuki
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1818336 

Ambipolar field-effect transistor (FET) device was fabricated with heterostructure of thin films of C60 and pentacene. Three types of device structures in the C60/pentacene heterostructure FET device were studied in order to realize the best ambipolar properties. In the middle-contact type FET device of C60 and pentacene, the mobility μ in p-channel operation was estimated to be 6.8×10-2 cm2 V-1 s-1, while the μ in n-channel operation was 1.3×10-3 cm2 V-1 s-1. This ambipolar FET device is available for a practical building-block to form CMOS integrated circuits with low-power consumption, good-noise margins, and ease of design.

Published in:
Applied Physics Letters  (Volume:85 ,  Issue: 20 )

Date of Publication: Nov 2004

Page(s):
4765 - 4767
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1818336
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Nov 2004

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